PART |
Description |
Maker |
IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五(巴西)直| 9A条(丁) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五(巴西)国际消费电子展| 50A条一(c
|
IXYS, Corp.
|
2DI30D-050 2DI30D-050A |
POWER TRANSISTOR MODULE 功率晶体管模 POWER TRANSISTOR MODULE 30 A, 600 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
|
FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
|
1DI300M-050 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 300A I(C) Power Transistor Module
|
Fuji Electric
|
ET1275 1SI50A100 |
TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1KV V(BR)CEO | 15A I(C) TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1KV V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块|独立| 1KV交五(巴西)总裁| 50A条一(c
|
IXYS, Corp.
|
MP4514 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA[Toshiba Semiconductor]
|
Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL SIPMOS垄莽 Power-Transistor SIPMOS庐 Power-Transistor SIPMOS? Power-Transistor SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
CPW256A CPW255A |
TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 500V V(BR)DSS | 17.5A I(D) 晶体管| MOSFET功率模块|全桥| 500V五(巴西)直| 17.5AI(四 TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 500V V(BR)DSS | 11A I(D)
|
Electronic Theatre Controls, Inc.
|
2DI100D-050 |
Power transistor module for high power switching, AC and DC motor control applications
|
COLLMER SEMICONDUCTOR INC FUJI ELECTRIC HOLDINGS CO., LTD.
|
STE50DE100 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.026 W POWER MODULE 混合发射器开关双极晶体管内酰胺酶1000 50 0.026 W电源模块 From old datasheet system HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT" 1000 V - 50 A - 0.026 Ohm POWER MODULE
|
STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
2DI150M-120 |
Power Transistor Module
|
Fuji Electric
|
2DI75M-050 |
POWER TRANSISTOR MODULE
|
Fuji Electric
|